Bachelor's Thesis: Stress Analysis of USP Laser Structuring in Sapphire
AachenPosted Aug 11, 2026via html-list
In cooperation with the Chair of Laser Technology LLT, the Fraunhofer Institute for Laser Technology ILT—Europe’s leading center for contract research and development in the field of laser technology—is offering the opportunity to write a thesis on the topic: Stress Analysis of USP Laser Structuring in Sapphire.
Modern laser processes such as selective laser etching (SLE) are used to fabricate high-precision glass components for the semiconductor industry, medical technology, and quantum technology, with feature dimensions of less than 1 µm. Crystalline materials such as sapphire are attractive for many applications due to their hardness and high thermal conductivity. However, due to its crystal structure, sapphire is particularly susceptible to stress and cracking. The mechanisms of stress and cracking formation, as well as their dependence on laser and process parameters, are still poorly understood. Comprehensive research into these relationships is, however, crucial for the reliable fabrication of increasingly complex sapphire components.