Advanced Characterization of Hafnium-Based Ferroelectric Capacitors to Reveal Interdependencies Among Critical Reliability Phenomena

Ferroelectric materials exhibit a spontaneous polarization that can be reversed by applying an external electric field and that remains stable even in the absence of such a field. Fluorite‑type oxides, such as HfO₂ and Hf₀.₅Zr₀.₅O₂ (HZO), form a particularly interesting class of ferroelectrics due to their compatibility with standard CMOS fabrication processes and their scalability to thicknesses below 10 nm. These properties have generated significant interest in developing non‑volatile memory technologies based on hafnium‑oxide ferroelectrics. Ferroelectric random‑access memory (FeRAM) has consequently emerged as a promising candidate for next‑generation non‑volatile memory, as it stores binary information using the stable remanent polarization state of a ferroelectric capacitor (FeCAP). This provides several advantages over conventional volatile dynamic RAM (DRAM), including non‑volatility (no refresh), reduced power consumption, superior scalability, and near‑DRAM‑level access times. Despite substantial improvements in FeCAPs—the core memory element in FeRAM—several reliability challenges remain. In particular, wake‑up (the need for initial cycling to achieve the full memory window), fatigue (the reduction of the memory window during repeated switching), and imprint (the increasing difficulty of switching the polarization state over time) continue to limit device performance and long‑term reliability. The aim of this project is to investigate the degree to which wake‑up, fatigue, and imprint are inter‑related phenomena in FeCAP devices. This will be achieved primarily through extensive electrical characterization of imec’s state‑of‑the‑art planar and 3D‑trench FeCAPs. The primary objective is to determine how changes induced by one phenomenon (e.g., wake‑up) influence device sensitivity to the others (e.g., fatigue and/or imprint), ultimately contributing to a deeper understanding of reliability limitations in hafnium‑based ferroelectric technologies. Project Tasks and Objectives: Collaborate closely with imec’s ferroelectric memory research team. Utilize imec’s experimental facilities to apply advanced device‑level characterization techniques on state‑of‑the‑art FeCAP devices. Learn to analyze, interpret, and clearly present research findings to a technical audience. Type of internship : Master internship Duration : 1 academic year Required educational background : Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering, Physics University promotor : Jan Van Houdt (KU Leuven) Supervising scientist(s) : For further information or for application, please contact Jasper Bizindavyi ( Jasper.Bizindavyi@imec.be ) and Brecht Truijen ( Brecht.Truijen@imec.be ) The reference code for this position is 2026-INT-066 . Mention this reference code in your application. Applications should include the following information: resume motivation current study Incomplete applications will not be considered