Research Associate ‒ Characterization of Power Devices (all genders)

The Fraunhofer Institute for Silicon Technology ISIT, located in Itzehoe, offers a cutting-edge research and manufacturing environment of approximately 200 employees and several local partners, featuring a state-of-the-art equipment portfolio, two cleanrooms, and approximately 700 m² of laboratory space. As a bridge between research and pre-development on the one hand and commercial application on the other, Fraunhofer ISIT is an exciting employer with innovative prospects for the future. Our »Power Electronics« business area focuses on the development of gallium nitride-based processes and devices. This includes lateral AlGaN/GaN HEMTs, vertical GaN MOSFETs and diodes, as well as GaN-based MEMS, sensors and microelectronic devices, and the development and adaptation of processes for the reliable production of these.