Investigation of III-V Heterostructures for High-Performance Electro-Optic Modulators

Future photonic integrated circuits require optical modulators with high efficiency, low power consumption, and compact footprints. III-V semiconductor materials exhibit strong electro-optic effects and offer significant opportunities for realizing high-performance optical modulation devices. In this internship, the student will investigate the optical and electronic properties of III-V semiconductor heterostructures, with a particular focus on quantum-confined and heterojunction-based modulation mechanisms. Numerical simulations and data analysis will be carried out to study the influence of material composition, heterostructure design, strain engineering, and electric-field-induced effects on optical absorption and modulation efficiency. The results will contribute to the design and optimization of next-generation III-V photonic modulators for integrated optical communication systems. Type of internship : Master internship Duration : 6 months Required educational background : Electrotechnics/Electrical Engineering, Physics Supervising scientist(s) : For further information or for application, please contact Mengxun Bai ( Mengxun.Bai@imec.be ) The reference code for this position is 2026-INT-262 . Mention this reference code in your application. Imec allowance will be provided. Applications should include the following information: resume motivation current study Incomplete applications will not be considered